IDW10G65C5XKSA1
Produktcode: 190599
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Lieblingsprodukt
Hersteller:
Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden
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Weitere Produktangebote IDW10G65C5XKSA1 nach Preis ab 2.78 EUR bis 7.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IDW10G65C5XKSA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 10A PGTO2473 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 180 µA @ 650 V |
auf Bestellung 239 Stücke: Lieferzeit 10-14 Tag (e) |
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IDW10G65C5XKSA1 | Infineon Technologies |
SiC Schottky Diodes SIC DIODES |
auf Bestellung 108 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDW10G65C5XKSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 10A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Description: DIODE SIL CARB 650V 10A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.97 EUR |
| 30+ | 3.87 EUR |
| 120+ | 3.18 EUR |
| IDW10G65C5XKSA1 |
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Hersteller: Infineon Technologies
SiC Schottky Diodes SIC DIODES
SiC Schottky Diodes SIC DIODES
auf Bestellung 108 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.44 EUR |
| 10+ | 4.56 EUR |
| 100+ | 3.54 EUR |
| 480+ | 2.78 EUR |