IDW15E65D2 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GP 650V 30A TO247-3-1
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3-1
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 47 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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Technische Details IDW15E65D2 Infineon Technologies
Description: DIODE GP 650V 30A TO247-3-1, Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: PG-TO247-3-1, Current - Average Rectified (Io): 30A, Technology: Standard, Reverse Recovery Time (trr): 47 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| IDW15E65D2 | Infineon Technologies |
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Hersteller: Infineon Technologies
Small Signal Switching Diodes IGBT PRODUCTS Rapid Switching
Small Signal Switching Diodes IGBT PRODUCTS Rapid Switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

