IDW20G65C5 Infineon Technologies


Infineon-IDW20G65C5B-DS-v02_00-EN-1225800.pdf
Hersteller: Infineon Technologies
Schottky Diodes & Rectifiers SIC DIODES
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Technische Details IDW20G65C5 Infineon Technologies

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO247-3; 112W, Type of diode: Schottky rectifying, Technology: CoolSiC™ 5G; SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 20A, Semiconductor structure: single diode, Case: PG-TO247-3, Max. forward voltage: 1.8V, Max. forward impulse current: 87A, Leakage current: 4.1µA, Power dissipation: 112W, Kind of package: tube.

Weitere Produktangebote IDW20G65C5

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IDW20G65C5XKSA1 IDW20G65C5XKSA1 INFINEON TECHNOLOGIES IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 87A
Leakage current: 4.1µA
Power dissipation: 112W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDW20G65C5XKSA1 IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 87A
Leakage current: 4.1µA
Power dissipation: 112W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH