IDW20S120FKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE ARR SIC 1200V 10A TO247-3
Current - Reverse Leakage @ Vr: 240 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io) (per Diode): 10A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details IDW20S120FKSA1 Infineon Technologies
Description: DIODE ARR SIC 1200V 10A TO247-3, Current - Reverse Leakage @ Vr: 240 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Obsolete, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO247-3, Current - Average Rectified (Io) (per Diode): 10A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IDW20S120FKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IDW20S120FKSA1 | Infineon Technologies |
Description: DIODE ARR SIC 1200V 10A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A (DC) Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 240 µA @ 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IDW20S120FKSA1 | Infineon Technologies |
Diodes - General Purpose, Power, Switching SIC DIODES |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IDW20S120FKSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE ARR SIC 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 1200 V
Description: DIODE ARR SIC 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IDW20S120FKSA1 |
|
Hersteller: Infineon Technologies
Diodes - General Purpose, Power, Switching SIC DIODES
Diodes - General Purpose, Power, Switching SIC DIODES
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH