IDW30E60AFKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 60A TO247-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 143 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produktrezensionen
Produktbewertung abgeben
Technische Details IDW30E60AFKSA1 Infineon Technologies
Description: DIODE GEN PURP 600V 60A TO247-3, Current - Reverse Leakage @ Vr: 40 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Discontinued at Digi-Key, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: PG-TO247-3, Current - Average Rectified (Io): 60A, Technology: Standard, Reverse Recovery Time (trr): 143 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IDW30E60AFKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IDW30E60AFKSA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 60A TO247-3 Current - Reverse Leakage @ Vr: 40 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PG-TO247-3 Current - Average Rectified (Io): 60A Technology: Standard Reverse Recovery Time (trr): 143 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IDW30E60AFKSA1 | Infineon Technologies |
Diodes - General Purpose, Power, Switching IGBT PRODUCTS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IDW30E60AFKSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 60A TO247-3
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 143 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE GEN PURP 600V 60A TO247-3
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 143 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IDW30E60AFKSA1 |
|
Hersteller: Infineon Technologies
Diodes - General Purpose, Power, Switching IGBT PRODUCTS
Diodes - General Purpose, Power, Switching IGBT PRODUCTS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH