Produkte > INFINEON TECHNOLOGIES > IDW30G65C5FKSA1
IDW30G65C5FKSA1

IDW30G65C5FKSA1 Infineon Technologies

IDW30G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4b3a2b221ca Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 860pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V
auf Bestellung 11397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+14.09 EUR
Mindestbestellmenge: 34
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Technische Details IDW30G65C5FKSA1 Infineon Technologies

Description: DIODE SIL CARB 650V 30A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 860pF @ 1V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: PG-TO247-3-1, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A, Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V.

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IDW30G65C5FKSA1 Hersteller : ROCHESTER ELECTRONICS INFNS19614-1.pdf?t.download=true&u=5oefqw Description: ROCHESTER ELECTRONICS - IDW30G65C5FKSA1 - IDW30G65 - COOLSIC SCHOTTKY DIODE
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 12368 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IDW30G65C5FKSA1 IDW30G65C5FKSA1 Hersteller : Infineon Technologies IDW30G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4b3a2b221ca Description: DIODE SIL CARB 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 860pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V
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Im Einkaufswagen  Stück im Wert von  UAH