IDW40G65C5BXKSA2 Infineon Technologies
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 26.72 EUR |
| 10+ | 24.25 EUR |
| 25+ | 23.74 EUR |
| 50+ | 23.34 EUR |
| 100+ | 20.82 EUR |
| 240+ | 20.22 EUR |
| 480+ | 19.04 EUR |
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Technische Details IDW40G65C5BXKSA2 Infineon Technologies
Description: DIODE SIL CARB 650V 20A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 590pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: PG-TO247-3, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 210 µA @ 650 V.
Weitere Produktangebote IDW40G65C5BXKSA2 nach Preis ab 20.87 EUR bis 27.39 EUR
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IDW40G65C5BXKSA2 | Hersteller : Infineon Technologies |
 Description: DIODE SIL CARB 650V 20A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 590pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 210 µA @ 650 V |
auf Bestellung 344 Stücke: Lieferzeit 10-14 Tag (e) |
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IDW40G65C5BXKSA2 | Hersteller : Infineon Technologies |
650V SiC Schottky Diode |
Produkt ist nicht verfügbar |
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IDW40G65C5BXKSA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; 112W; PG-TO247-3 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Power dissipation: 112W Semiconductor structure: common cathode; double Case: PG-TO247-3 Kind of package: tube Max. forward impulse current: 87A Max. forward voltage: 1.8V Leakage current: 4.1µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IDW40G65C5BXKSA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; 112W; PG-TO247-3 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Power dissipation: 112W Semiconductor structure: common cathode; double Case: PG-TO247-3 Kind of package: tube Max. forward impulse current: 87A Max. forward voltage: 1.8V Leakage current: 4.1µA |
Produkt ist nicht verfügbar |