Technische Details IDWD80G200C5XKSA1 Infineon Technologies
Description: DIODE SIC 2000V 214A PGTO2472U01, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 9100pF @ 1V, 100kHz, Current - Average Rectified (Io): 214A, Supplier Device Package: PG-TO247-2-U01, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 2000 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 80 A, Current - Reverse Leakage @ Vr: 1.2 mA @ 2 kV.
Weitere Produktangebote IDWD80G200C5XKSA1 nach Preis ab 45.89 EUR bis 66.3 EUR
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IDWD80G200C5XKSA1 | Infineon Technologies |
 Description: DIODE SIC 2000V 214A PGTO2472U01Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 9100pF @ 1V, 100kHz Current - Average Rectified (Io): 214A Supplier Device Package: PG-TO247-2-U01 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 80 A Current - Reverse Leakage @ Vr: 1.2 mA @ 2 kV |
auf Bestellung 219 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDWD80G200C5XKSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SIC 2000V 214A PGTO2472U01
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 9100pF @ 1V, 100kHz
Current - Average Rectified (Io): 214A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 80 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 2 kV
Description: DIODE SIC 2000V 214A PGTO2472U01
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 9100pF @ 1V, 100kHz
Current - Average Rectified (Io): 214A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 80 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 2 kV
auf Bestellung 219 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 66.3 EUR |
| 30+ | 45.89 EUR |