IFF600B12ME4PB11BPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 1200V 600A 40W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 40 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 293.54 EUR |
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Technische Details IFF600B12ME4PB11BPSA1 Infineon Technologies
Description: IGBT MOD 1200V 600A 40W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 600 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 40 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 37 nF @ 25 V.
Weitere Produktangebote IFF600B12ME4PB11BPSA1 nach Preis ab 314.92 EUR bis 314.92 EUR
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IFF600B12ME4PB11BPSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 600A 40W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 40 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| IFF600B12ME4PB11BPSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.2kA Application: for UPS; Inverter; motors; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Case: AG-ECONOD-6 Max. off-state voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IFF600B12ME4PB11BPSA1 | Hersteller : Infineon Technologies |
IGBT Modules 1200 V, 600 A dual IGBT module |
Produkt ist nicht verfügbar |
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| IFF600B12ME4PB11BPSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.2kA Application: for UPS; Inverter; motors; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Case: AG-ECONOD-6 Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |