IFF750B12ME7B11BPSA1 Infineon Technologies
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 479.49 EUR |
| 10+ | 436.73 EUR |
| 20+ | 422.72 EUR |
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Technische Details IFF750B12ME7B11BPSA1 Infineon Technologies
Description: MEDIUM POWER ECONO, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 750A, NTC Thermistor: Yes, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 750 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 51 µA, Input Capacitance (Cies) @ Vce: 115000 pF @ 25 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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IFF750B12ME7B11BPSA1 | Hersteller : Infineon Technologies |
 Description: MEDIUM POWER ECONOPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 750A NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 750 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 51 µA Input Capacitance (Cies) @ Vce: 115000 pF @ 25 V |
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