IFF750B12ME7B11BPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MODULE 1200V 750A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 750A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 51 µA
Input Capacitance (Cies) @ Vce: 115000 pF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 284.68 EUR |
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Technische Details IFF750B12ME7B11BPSA1 Infineon Technologies
Description: IGBT MODULE 1200V 750A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 750A, NTC Thermistor: Yes, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 750 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 51 µA, Input Capacitance (Cies) @ Vce: 115000 pF @ 25 V.
Weitere Produktangebote IFF750B12ME7B11BPSA1 nach Preis ab 285.58 EUR bis 285.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| IFF750B12ME7B11BPSA1 | Hersteller : Infineon Technologies |
IGBT Modules 1200 V, 750 A dual IGBT module |
auf Bestellung 66 Stücke: Lieferzeit 10-14 Tag (e) |
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