IGA03N120H2 Infineon
Hersteller: Infineon
IGBT-transistors HIGH SPEED TECH 1200V 3A, TO-220FP-3 Група товару: Транзистори Од. вим: шт
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Technische Details IGA03N120H2 Infineon
Description: IGA03N120 - DISCRETE IGBT WITHOU, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: PG-TO220-3-31, Td (on/off) @ 25°C: 9.2ns/281ns, Switching Energy: 140µJ (on), 150µJ (off), Test Condition: 800V, 3A, 82Ohm, 15V, Gate Charge: 8.6 nC, Part Status: Active, Current - Collector (Ic) (Max): 8.2 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 9 A, Power - Max: 29 W.
Weitere Produktangebote IGA03N120H2
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IGA03N120H2 | Hersteller : Infineon Technologies |
Description: IGA03N120 - DISCRETE IGBT WITHOU Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Supplier Device Package: PG-TO220-3-31 Td (on/off) @ 25°C: 9.2ns/281ns Switching Energy: 140µJ (on), 150µJ (off) Test Condition: 800V, 3A, 82Ohm, 15V Gate Charge: 8.6 nC Part Status: Active Current - Collector (Ic) (Max): 8.2 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 9 A Power - Max: 29 W |
Produkt ist nicht verfügbar |
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IGA03N120H2 | Hersteller : Infineon Technologies |
IGBTs HIGH SPEED TECH 1200V 3A |
Produkt ist nicht verfügbar |