IGB10N60TATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT NPT FS 600V 20A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
Description: IGBT NPT FS 600V 20A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.1 EUR |
2000+ | 1.03 EUR |
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Produktbewertung abgeben
Technische Details IGB10N60TATMA1 Infineon Technologies
Description: IGBT NPT FS 600V 20A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A, Supplier Device Package: PG-TO263-3-2, IGBT Type: NPT, Trench Field Stop, Td (on/off) @ 25°C: 12ns/215ns, Switching Energy: 430µJ, Test Condition: 400V, 10A, 23Ohm, 15V, Gate Charge: 62 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 110 W.
Weitere Produktangebote IGB10N60TATMA1 nach Preis ab 0.75 EUR bis 2.98 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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IGB10N60TATMA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 600V 24A 110W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 835 Stücke: Lieferzeit 14-21 Tag (e) |
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IGB10N60TATMA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 600V 24A 110W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 835 Stücke: Lieferzeit 14-21 Tag (e) |
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IGB10N60TATMA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 600V 24A 110W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 985 Stücke: Lieferzeit 14-21 Tag (e) |
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IGB10N60TATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 110W Case: D2PAK Gate-emitter voltage: ±20V Mounting: SMD Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 670 Stücke: Lieferzeit 7-14 Tag (e) |
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IGB10N60TATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 110W Case: D2PAK Gate-emitter voltage: ±20V Mounting: SMD Kind of package: tube |
auf Bestellung 670 Stücke: Lieferzeit 14-21 Tag (e) |
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IGB10N60TATMA1 | Hersteller : Infineon Technologies | IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB10N60TATMA1 | Hersteller : Infineon Technologies |
Description: IGBT NPT FS 600V 20A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT, Trench Field Stop Td (on/off) @ 25°C: 12ns/215ns Switching Energy: 430µJ Test Condition: 400V, 10A, 23Ohm, 15V Gate Charge: 62 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 110 W |
auf Bestellung 4037 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB10N60TATMA1 | Hersteller : INFINEON |
Description: INFINEON - IGB10N60TATMA1 - IGBT, 10 A, 2.05 V, 110 W, 600 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.05V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 110W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 10A SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 2240 Stücke: Lieferzeit 14-21 Tag (e) |
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IGB10N60TATMA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 600V 24A 110000mW 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IGB10N60TATMA1 | Hersteller : Infineon |
IGBT 600V 20A 110W TO263-3 TrenchStop -40+175°C IGB10N60TATMA1 Infineon Technologies TIGB10n60t Anzahl je Verpackung: 10 Stücke |
auf Bestellung 45 Stücke: Lieferzeit 7-14 Tag (e) |
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IGB10N60TATMA1 Produktcode: 191421 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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IGB10N60TATMA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 600V 24A 110W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |