IGD08N120S7ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.38 EUR |
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Technische Details IGD08N120S7ATMA1 Infineon Technologies
Description: IGBT TRENCH FS 1200V 24A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 15ns/149ns, Switching Energy: 460µJ (on), 410µJ (off), Test Condition: 600V, 8A, 20Ohm, 15V, Gate Charge: 55 nC, Current - Collector (Ic) (Max): 24 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 106 W.
Weitere Produktangebote IGD08N120S7ATMA1 nach Preis ab 1.54 EUR bis 4.54 EUR
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IGD08N120S7ATMA1 | Hersteller : Infineon Technologies |
IGBTs INDUSTRY 14 |
auf Bestellung 2224 Stücke: Lieferzeit 10-14 Tag (e) |
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IGD08N120S7ATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 1200V 24A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/149ns Switching Energy: 460µJ (on), 410µJ (off) Test Condition: 600V, 8A, 20Ohm, 15V Gate Charge: 55 nC Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 24 A Power - Max: 106 W |
auf Bestellung 2828 Stücke: Lieferzeit 10-14 Tag (e) |
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IGD08N120S7ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IGD08N120S7ATMA1 - IGBT, 24 A, 1.65 V, 106 W, 1.2 kV, TO-252, 3 Pin(s) tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: TBA Kollektor-Emitter-Sättigungsspannung: 1.65V usEccn: EAR99 euEccn: NLR Verlustleistung: 106W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: TRENCHSTOP IGBT 7 Series Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 24A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 2450 Stücke: Lieferzeit 14-21 Tag (e) |
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IGD08N120S7ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IGD08N120S7ATMA1 - IGBT, 24 A, 1.65 V, 106 W, 1.2 kV, TO-252, 3 Pin(s) tariffCode: 85412100 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 2450 Stücke: Lieferzeit 14-21 Tag (e) |
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| IGD08N120S7ATMA1 | Hersteller : Infineon Technologies |
IGD08N120S7ATMA1 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IGD08N120S7ATMA1 | Hersteller : Infineon Technologies |
IGD08N120S7ATMA1 |
Produkt ist nicht verfügbar |