IGLD60R190D1SAUMA1 Infineon Technologies

Description: GAN HV PG-LSON-8, Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): -10V, Part Status: Active, Supplier Device Package: PG-LSON-8-1, Vgs(th) (Max) @ Id: 1.6V @ 960µA, Power Dissipation (Max): 62.5W (Tc), Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-LDFN Exposed Pad, Packaging: Tape & Reel (TR).