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IGLR60R190D1E8238XUMA1

IGLR60R190D1E8238XUMA1 Infineon Technologies


Hersteller: Infineon Technologies
Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Power Dissipation (Max): 55.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-TSON-8-6
Part Status: Discontinued at Digi-Key
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
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Technische Details IGLR60R190D1E8238XUMA1 Infineon Technologies

Description: GAN HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc), Power Dissipation (Max): 55.5W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 960µA, Supplier Device Package: PG-TSON-8-6, Part Status: Discontinued at Digi-Key, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 600 V, Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V.

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IGLR60R190D1E8238XUMA1 Hersteller : Infineon Technologies Infineon_IGLR60R190D1_DataSheet_v03_00_EN-3107411.pdf MOSFET
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