IGLR60R190D1E8238XUMA1 Infineon Technologies

Description: GAN HV, Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V, Drain to Source Voltage (Vdss): 600 V, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc), FET Type: N-Channel, Part Status: Discontinued at Digi-Key, Supplier Device Package: PG-TSON-8-6, Vgs(th) (Max) @ Id: 1.6V @ 960µA, Power Dissipation (Max): 55.5W (Tc), Vgs (Max): -10V.