IGLR60R190D1XUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: GAN HV
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Active
Supplier Device Package: PG-TSON-8-6
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Power Dissipation (Max): 55.5W (Tc)
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Technische Details IGLR60R190D1XUMA1 Infineon Technologies
Description: GAN HV, Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): -10V, Part Status: Active, Supplier Device Package: PG-TSON-8-6, Vgs(th) (Max) @ Id: 1.6V @ 960µA, Power Dissipation (Max): 55.5W (Tc).
Weitere Produktangebote IGLR60R190D1XUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IGLR60R190D1XUMA1 | Infineon Technologies |
Description: GAN HV Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc) Power Dissipation (Max): 55.5W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 960µA Supplier Device Package: PG-TSON-8-6 Part Status: Active Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IGLR60R190D1XUMA1 | Infineon Technologies |
GaN FETs HV GAN DISCRETES |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IGLR60R190D1XUMA1 |
|
Hersteller: Infineon Technologies
Description: GAN HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Power Dissipation (Max): 55.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-TSON-8-6
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Description: GAN HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Power Dissipation (Max): 55.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-TSON-8-6
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IGLR60R190D1XUMA1 |
|
Hersteller: Infineon Technologies
GaN FETs HV GAN DISCRETES
GaN FETs HV GAN DISCRETES
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH