IGLT65R025D2AUMA1 Infineon Technologies

Description: GANFET N-CH 650V 67A 16SOP, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 67A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 18A, Power Dissipation (Max): 219W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 6.1mA, Supplier Device Package: PG-HDSOP-16-8, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V.