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IGLT65R110B2AUMA1

IGLT65R110B2AUMA1 Infineon Technologies

infineon-iglt65r110b2-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 14A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4.5A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.36mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.52 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 149 pF @ 400 V
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Lieferzeit 10-14 Tag (e)
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10+8.69 EUR
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100+7.31 EUR
250+6.97 EUR
500+6.76 EUR
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Technische Details IGLT65R110B2AUMA1 Infineon Technologies

Description: GANFET N-CH 650V 14A 16SOP, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 4.5A, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 1.36mA, Supplier Device Package: PG-HDSOP-16-9, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 1.52 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 149 pF @ 400 V.

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IGLT65R110B2AUMA1 IGLT65R110B2AUMA1 Hersteller : Infineon Technologies infineon-iglt65r110b2-datasheet-en.pdf Description: GANFET N-CH 650V 14A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4.5A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.36mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.52 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 149 pF @ 400 V
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IGLT65R110B2AUMA1 IGLT65R110B2AUMA1 Hersteller : Infineon Technologies infineon-iglt65r110b2-datasheet-en.pdf HV GAN DISCRETES
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