| Anzahl | Preis |
|---|---|
| 1+ | 19.31 EUR |
| 10+ | 17.58 EUR |
| 50+ | 17.12 EUR |
| 100+ | 15.42 EUR |
| 500+ | 12.67 EUR |
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Technische Details IGO60R070D1AUMA2 Infineon Technologies
Description: GAN HV, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 20-PowerSOIC (0.433", 11.00mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): -10V, Supplier Device Package: PG-DSO-20-85, Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Power Dissipation (Max): 125W (Tc), Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel.
Weitere Produktangebote IGO60R070D1AUMA2 nach Preis ab 11.96 EUR bis 22.42 EUR
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IGO60R070D1AUMA2 | Infineon Technologies |
 Description: GAN HVPackaging: Cut Tape (CT) Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
auf Bestellung 788 Stücke: Lieferzeit 10-14 Tag (e) |
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| IGO60R070D1AUMA2 |
|
Hersteller: Infineon Technologies
Description: GAN HV
Packaging: Cut Tape (CT)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GAN HV
Packaging: Cut Tape (CT)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
auf Bestellung 788 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 22.42 EUR |
| 10+ | 15.73 EUR |
| 100+ | 11.96 EUR |