IGP01N120H2 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT 1200V 3.2A 28W TO220-3
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Power - Max: 28 W
Current - Collector Pulsed (Icm): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3.2 A
Part Status: Active
Gate Charge: 8.6 nC
Test Condition: 800V, 1A, 241Ohm, 15V
Switching Energy: 140µJ
Td (on/off) @ 25°C: 13ns/370ns
Supplier Device Package: PG-TO220-3-1
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
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Technische Details IGP01N120H2 Infineon Technologies
Description: IGBT 1200V 3.2A 28W TO220-3, Input Type: Standard, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk, Power - Max: 28 W, Current - Collector Pulsed (Icm): 3.5 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 3.2 A, Part Status: Active, Gate Charge: 8.6 nC, Test Condition: 800V, 1A, 241Ohm, 15V, Switching Energy: 140µJ, Td (on/off) @ 25°C: 13ns/370ns, Supplier Device Package: PG-TO220-3-1, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A.
Weitere Produktangebote IGP01N120H2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IGP01N120H2 | Infineon Technologies |
IGBT Transistors HIGH SPEED 2 TECH 1200V 1A |
auf Bestellung 154 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IGP01N120H2 |
|
Hersteller: Infineon Technologies
IGBT Transistors HIGH SPEED 2 TECH 1200V 1A
IGBT Transistors HIGH SPEED 2 TECH 1200V 1A
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)