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IGP03N120H2XKSA1 Infineon Technologies


IGx03N120H2.pdf
Hersteller: Infineon Technologies
Description: IGBT 1200V 9.6A 62.5W TO220-3
Power - Max: 62.5 W
Current - Collector Pulsed (Icm): 9.9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 9.6 A
Part Status: Obsolete
Gate Charge: 22 nC
Test Condition: 800V, 3A, 82Ohm, 15V
Switching Energy: 290µJ
Td (on/off) @ 25°C: 9.2ns/281ns
Supplier Device Package: PG-TO220-3-1
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details IGP03N120H2XKSA1 Infineon Technologies

Description: IGBT 1200V 9.6A 62.5W TO220-3, Power - Max: 62.5 W, Current - Collector Pulsed (Icm): 9.9 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 9.6 A, Part Status: Obsolete, Gate Charge: 22 nC, Test Condition: 800V, 3A, 82Ohm, 15V, Switching Energy: 290µJ, Td (on/off) @ 25°C: 9.2ns/281ns, Supplier Device Package: PG-TO220-3-1, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Input Type: Standard, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.

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IGP03N120H2XKSA1 Infineon Technologies IGx03N120H2.pdf IGBT Transistors IGBT PRODUCTS
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IGP03N120H2XKSA1 IGx03N120H2.pdf
Hersteller: Infineon Technologies
IGBT Transistors IGBT PRODUCTS
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