IGP30N65H5XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/177ns
Switching Energy: 280µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
| Anzahl | Preis |
|---|---|
| 5+ | 4.3 EUR |
| 50+ | 2.13 EUR |
| 100+ | 1.92 EUR |
| 500+ | 1.55 EUR |
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Technische Details IGP30N65H5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 55A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: PG-TO220-3, IGBT Type: Trench, Td (on/off) @ 25°C: 19ns/177ns, Switching Energy: 280µJ (on), 100µJ (off), Test Condition: 400V, 15A, 23Ohm, 15V, Gate Charge: 70 nC, Current - Collector (Ic) (Max): 55 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 188 W.
Weitere Produktangebote IGP30N65H5XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| IGP30N65H5XKSA1 | Infineon Technologies |
IGBT Transistors INDUSTRY 14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IGP30N65H5XKSA1 |
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Hersteller: Infineon Technologies
IGBT Transistors INDUSTRY 14
IGBT Transistors INDUSTRY 14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

