Technische Details IGP30N65H5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 55A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: PG-TO220-3, IGBT Type: Trench, Td (on/off) @ 25°C: 19ns/177ns, Switching Energy: 280µJ (on), 100µJ (off), Test Condition: 400V, 15A, 23Ohm, 15V, Gate Charge: 70 nC, Current - Collector (Ic) (Max): 55 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 188 W.
Weitere Produktangebote IGP30N65H5XKSA1 nach Preis ab 1.84 EUR bis 5.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IGP30N65H5XKSA1 | Infineon Technologies |
 Trans IGBT Chip N-CH 650V 55A 188W 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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IGP30N65H5XKSA1 | Infineon Technologies |
Trans IGBT Chip N-CH 650V 55A 188W 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
|
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IGP30N65H5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 55A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: PG-TO220-3 IGBT Type: Trench Td (on/off) @ 25°C: 19ns/177ns Switching Energy: 280µJ (on), 100µJ (off) Test Condition: 400V, 15A, 23Ohm, 15V Gate Charge: 70 nC Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 188 W |
auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
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| IGP30N65H5XKSA1 |
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Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 650V 55A 188W 3-Pin(3+Tab) TO-220 Tube
Trans IGBT Chip N-CH 650V 55A 188W 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 2.95 EUR |
| 66+ | 2.57 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.94 EUR |
| IGP30N65H5XKSA1 |
|
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 650V 55A 188W 3-Pin(3+Tab) TO-220 Tube
Trans IGBT Chip N-CH 650V 55A 188W 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 2.95 EUR |
| IGP30N65H5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/177ns
Switching Energy: 280µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
Description: IGBT TRENCH 650V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/177ns
Switching Energy: 280µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.12 EUR |
| 50+ | 2.53 EUR |
| 100+ | 2.28 EUR |
| 500+ | 1.84 EUR |