IGW40N65H5AXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans IGBT Chip N-CH 650V 74A 250W 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
auf Bestellung 3582 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 116+ | 4.68 EUR |
| 500+ | 4.28 EUR |
| 1000+ | 3.89 EUR |
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Technische Details IGW40N65H5AXKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench, Td (on/off) @ 25°C: 20ns/149ns, Switching Energy: 360µJ (on), 110µJ (off), Test Condition: 400V, 20A, 15Ohm, 15V, Gate Charge: 92 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 74 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 250 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IGW40N65H5AXKSA1 nach Preis ab 5.15 EUR bis 5.15 EUR
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IGW40N65H5AXKSA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH 650V 74A TO247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 20ns/149ns Switching Energy: 360µJ (on), 110µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 92 nC Part Status: Obsolete Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 250 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3360 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW40N65H5AXKSA1 | Hersteller : Infineon Technologies |
IGBT Transistors IGBT PRODUCTS |
auf Bestellung 235 Stücke: Lieferzeit 10-14 Tag (e) |
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| IGW40N65H5AXKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IGW40N65H5AXKSA1 - IGW40N65 INSULATED GATE BIPOLAR TRANSIS tariffCode: 85412900 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 3360 Stücke: Lieferzeit 14-21 Tag (e) |
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IGW40N65H5AXKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 650V 74A 250000mW Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IGW40N65H5AXKSA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH 650V 74A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 20ns/149ns Switching Energy: 360µJ (on), 110µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 92 nC Part Status: Obsolete Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 250 W Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |