IHW30N60T Infineon Technologies
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details IHW30N60T Infineon Technologies
Description: IHW30N60 - DISCRETE IGBT WITH AN, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: PG-TO247-3-21, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 23ns/254ns, Switching Energy: 770µJ (off), Test Condition: 400V, 30A, 10.6Ohm, 15V, Gate Charge: 167 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 187 W.
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| IHW30N60T |
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auf Bestellung 87 Stücke: Lieferzeit 21-28 Tag (e) |
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IHW30N60T | Hersteller : Infineon Technologies |
Description: IHW30N60 - DISCRETE IGBT WITH AN Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: PG-TO247-3-21 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/254ns Switching Energy: 770µJ (off) Test Condition: 400V, 30A, 10.6Ohm, 15V Gate Charge: 167 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 187 W |
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