IHW30N60T Infineon Technologies

Description: IHW30N60 - DISCRETE IGBT WITH AN, Power - Max: 187 W, Current - Collector Pulsed (Icm): 90 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 60 A, Gate Charge: 167 nC, Test Condition: 400V, 30A, 10.6Ohm, 15V, Switching Energy: 770µJ (off), Td (on/off) @ 25°C: 23ns/254ns, IGBT Type: Trench Field Stop, Supplier Device Package: PG-TO247-3-21, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.