IJW120R070T1FKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: JFET PWR FIELD EFFECT
Current - Drain (Idss) @ Vds (Vgs=0): 3.3 µA @ 1200 V
Resistance - RDS(On): 70 mOhms
Power - Max: 238 W
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: PG-TO247-3
Current Drain (Id) - Max: 35 A
Voltage - Breakdown (V(BR)GSS): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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Technische Details IJW120R070T1FKSA1 Infineon Technologies
Description: JFET PWR FIELD EFFECT, Current - Drain (Idss) @ Vds (Vgs=0): 3.3 µA @ 1200 V, Resistance - RDS(On): 70 mOhms, Power - Max: 238 W, Drain to Source Voltage (Vdss): 1200 V, Supplier Device Package: PG-TO247-3, Current Drain (Id) - Max: 35 A, Voltage - Breakdown (V(BR)GSS): 1200 V, Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS), FET Type: N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.

