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IJW120R100T1FKSA1

IJW120R100T1FKSA1 Infineon Technologies

IJW120R100T1.pdf
Hersteller: Infineon Technologies
Description: JFET N-CH 1.2KV 26A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS)
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 26 A
Supplier Device Package: PG-TO247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 190 W
Resistance - RDS(On): 100 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 µA @ 1200 V
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Technische Details IJW120R100T1FKSA1 Infineon Technologies

Description: JFET N-CH 1.2KV 26A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS), Voltage - Breakdown (V(BR)GSS): 1200 V, Current Drain (Id) - Max: 26 A, Supplier Device Package: PG-TO247-3, Drain to Source Voltage (Vdss): 1200 V, Power - Max: 190 W, Resistance - RDS(On): 100 mOhms, Current - Drain (Idss) @ Vds (Vgs=0): 1.5 µA @ 1200 V.

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IJW120R100T1FKSA1 IJW120R100T1FKSA1 Infineon Technologies IJW120R100T1.pdf Description: JFET N-CH 1.2KV 26A TO247-3
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 µA @ 1200 V
Resistance - RDS(On): 100 mOhms
Power - Max: 190 W
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: PG-TO247-3
Current Drain (Id) - Max: 26 A
Voltage - Breakdown (V(BR)GSS): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IJW120R100T1FKSA1 Infineon Technologies infineon_05032021_IJW120R100T1-2320810.pdf JFETs SIC CHIP/DISCRETE
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IJW120R100T1FKSA1 IJW120R100T1.pdf
IJW120R100T1FKSA1
Hersteller: Infineon Technologies
Description: JFET N-CH 1.2KV 26A TO247-3
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 µA @ 1200 V
Resistance - RDS(On): 100 mOhms
Power - Max: 190 W
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: PG-TO247-3
Current Drain (Id) - Max: 26 A
Voltage - Breakdown (V(BR)GSS): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IJW120R100T1FKSA1 infineon_05032021_IJW120R100T1-2320810.pdf
Hersteller: Infineon Technologies
JFETs SIC CHIP/DISCRETE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH