IKA08N65F5XKSA1 Infineon Technologies
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.4 EUR |
| 25+ | 4.29 EUR |
| 100+ | 3.66 EUR |
| 500+ | 3.15 EUR |
| 1000+ | 2.57 EUR |
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Technische Details IKA08N65F5XKSA1 Infineon Technologies
Description: IGBT 650V 10.8A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 41 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A, Supplier Device Package: PG-TO220-3, Td (on/off) @ 25°C: 10ns/116ns, Switching Energy: 70µJ (on), 20µJ (off), Test Condition: 400V, 4A, 48Ohm, 15V, Gate Charge: 22 nC, Part Status: Active, Current - Collector (Ic) (Max): 10.8 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 31.2 W.
Weitere Produktangebote IKA08N65F5XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IKA08N65F5XKSA1 | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 650V 10.8A 31200mW 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IKA08N65F5XKSA1 | Hersteller : Infineon Technologies |
Description: IGBT 650V 10.8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 41 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: PG-TO220-3 Td (on/off) @ 25°C: 10ns/116ns Switching Energy: 70µJ (on), 20µJ (off) Test Condition: 400V, 4A, 48Ohm, 15V Gate Charge: 22 nC Part Status: Active Current - Collector (Ic) (Max): 10.8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 31.2 W |
Produkt ist nicht verfügbar |