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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.56 EUR |
| 10+ | 2.55 EUR |
| 100+ | 2.04 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.47 EUR |
| 2500+ | 1.40 EUR |
| 5000+ | 1.35 EUR |
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Technische Details IKA08N65H5 Infineon Technologies
Description: IKA08N65 - DISCRETE IGBT WITH AN, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A, Supplier Device Package: PG-TO220-3-111, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 11ns/115ns, Switching Energy: 70µJ (on), 30µJ (off), Test Condition: 400V, 4A, 48Ohm, 15V, Gate Charge: 22 nC, Part Status: Active, Current - Collector (Ic) (Max): 10.8 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 31.2 W.
Weitere Produktangebote IKA08N65H5
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IKA08N65H5 | Hersteller : Infineon Technologies |
 Description: IKA08N65 - DISCRETE IGBT WITH ANPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: PG-TO220-3-111 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 11ns/115ns Switching Energy: 70µJ (on), 30µJ (off) Test Condition: 400V, 4A, 48Ohm, 15V Gate Charge: 22 nC Part Status: Active Current - Collector (Ic) (Max): 10.8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 31.2 W |
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