IKA08N65H5 Infineon Technologies

Description: IKA08N65 - DISCRETE IGBT WITH AN, Power - Max: 31.2 W, Current - Collector Pulsed (Icm): 24 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 10.8 A, Gate Charge: 22 nC, Test Condition: 400V, 4A, 48Ohm, 15V, Switching Energy: 70µJ (on), 30µJ (off), Td (on/off) @ 25°C: 11ns/115ns, IGBT Type: Trench Field Stop, Supplier Device Package: PG-TO220-3-111, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A, Reverse Recovery Time (trr): 40 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk, Part Status: Active.