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IKA15N65ET6XKSA2

IKA15N65ET6XKSA2 Infineon Technologies


Infineon_IKA15N65ET6_DataSheet_v01_00_EN-3362223.pdf Hersteller: Infineon Technologies
IGBT Transistors HOME APPLIANCES 14
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Technische Details IKA15N65ET6XKSA2 Infineon Technologies

Description: IGBT TRENCH FS 650V 17A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 69 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A, Supplier Device Package: PG-TO220-3-FP, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/117ns, Switching Energy: 230µJ (on), 110µJ (off), Test Condition: 400V, 11.5A, 47Ohm, 15V, Gate Charge: 37 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 17 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 57.5 A, Power - Max: 45 W.

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IKA15N65ET6XKSA2 IKA15N65ET6XKSA2 Hersteller : Infineon Technologies Infineon-IKA15N65ET6-DS-v02_02-EN.pdf?fileId=5546d4625e763904015e844d635e5280 Description: IGBT TRENCH FS 650V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 69 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO220-3-FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 45 W
auf Bestellung 488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.17 EUR
50+ 3.36 EUR
100+ 2.76 EUR
Mindestbestellmenge: 5
IKA15N65ET6XKSA2 IKA15N65ET6XKSA2 Hersteller : INFINEON 2718669.pdf Description: INFINEON - IKA15N65ET6XKSA2 - IGBT, 17 A, 1.5 V, 45 W, 650 V, TO-220, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.5V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 45W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: TRENCHSTOP IGBT6
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 17A
auf Bestellung 43 Stücke:
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IKA15N65ET6XKSA2 IKA15N65ET6XKSA2 Hersteller : Infineon Technologies infineon-ika15n65et6-datasheet-v01_00-en.pdf Trans IGBT Chip N-CH 650V 17A 45000mW 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 6336 Stücke:
Lieferzeit 14-21 Tag (e)
IKA15N65ET6XKSA2 IKA15N65ET6XKSA2 Hersteller : INFINEON TECHNOLOGIES IKA15N65ET6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 650V
Collector current: 11A
Power dissipation: 22W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 57.5A
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Manufacturer series: T6
Turn-on time: 50ns
Turn-off time: 202ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IKA15N65ET6XKSA2 IKA15N65ET6XKSA2 Hersteller : INFINEON TECHNOLOGIES IKA15N65ET6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 650V
Collector current: 11A
Power dissipation: 22W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 57.5A
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Manufacturer series: T6
Turn-on time: 50ns
Turn-off time: 202ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar