IKB20N60TATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans IGBT Chip N-CH 600V 40A 166W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1669 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 85+ | 1.72 EUR |
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Technische Details IKB20N60TATMA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 41 ns, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A, Supplier Device Package: PG-TO263-3-2, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/199ns, Switching Energy: 770µJ, Test Condition: 400V, 20A, 12Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 166 W.
Weitere Produktangebote IKB20N60TATMA1 nach Preis ab 1.35 EUR bis 5.26 EUR
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IKB20N60TATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 600V 40A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 41 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/199ns Switching Energy: 770µJ Test Condition: 400V, 20A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 166 W |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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IKB20N60TATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 40A 166W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 930 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB20N60TATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 40A 166W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1669 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB20N60TATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 40A 166W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB20N60TATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 600V 40A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 41 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/199ns Switching Energy: 770µJ Test Condition: 400V, 20A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 166 W |
auf Bestellung 7885 Stücke: Lieferzeit 10-14 Tag (e) |
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IKB20N60TATMA1 | Hersteller : INFINEON |
Description: INFINEON - IKB20N60TATMA1 - IGBT, 20 A, 2.05 V, 166 W, 600 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.05V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 166W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 600V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 20A SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1641 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB20N60TATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 40A 166000mW Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IKB20N60TATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 40A 166W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IKB20N60TATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 166W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 0.12µC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 28A Pulsed collector current: 60A Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IKB20N60TATMA1 | Hersteller : Infineon Technologies |
IGBT Transistors INDUSTRY 14 |
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IKB20N60TATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 166W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 0.12µC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 28A Pulsed collector current: 60A Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |