IKD06N65ET6ARMA1 Infineon Technologies

Description: IGBT TRENCH FS 650V 9A TO252-3, Power - Max: 31 W, Current - Collector Pulsed (Icm): 18 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Gate Charge: 13.7 nC, Test Condition: 400V, 3A, 47Ohm, 15V, Switching Energy: 60µJ (on), 30µJ (off), Td (on/off) @ 25°C: 15ns/35ns, IGBT Type: Trench Field Stop, Supplier Device Package: PG-TO252-3, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 3A, Reverse Recovery Time (trr): 30 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Surface Mount, Current - Collector (Ic) (Max): 9 A, Part Status: Not For New Designs, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).