IKD15N60RF Infineon Technologies
auf Bestellung 1666 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.38 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.85 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.34 EUR |
| 2500+ | 1.27 EUR |
| 5000+ | 1.23 EUR |
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Technische Details IKD15N60RF Infineon Technologies
Description: IKD15N60 - DISCRETE IGBT WITH AN, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 74 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A, Supplier Device Package: PG-TO252-3-313, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 13ns/160ns, Switching Energy: 270µJ (on), 250µJ (off), Test Condition: 400V, 15A, 15Ohm, 15V, Gate Charge: 90 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 250 W.
Weitere Produktangebote IKD15N60RF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IKD15N60RF | Hersteller : Infineon Technologies |
 Description: IKD15N60 - DISCRETE IGBT WITH ANPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 74 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: PG-TO252-3-313 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/160ns Switching Energy: 270µJ (on), 250µJ (off) Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 250 W |
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