IKD15N60RFAATMA1 Infineon Technologies
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Technische Details IKD15N60RFAATMA1 Infineon Technologies
Description: IGBT 600V 30A 250W PG-TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 74 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench, Td (on/off) @ 25°C: 13ns/160ns, Switching Energy: 270µJ (on), 250µJ (off), Test Condition: 400V, 15A, 15Ohm, 15V, Gate Charge: 90 nC, Grade: Automotive, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 240 W, Qualification: AEC-Q101.
Weitere Produktangebote IKD15N60RFAATMA1
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IKD15N60RFAATMA1 | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 30A 240000mW Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IKD15N60RFAATMA1 | Hersteller : Infineon Technologies |
Description: IGBT 600V 30A 250W PG-TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 74 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Td (on/off) @ 25°C: 13ns/160ns Switching Energy: 270µJ (on), 250µJ (off) Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 90 nC Grade: Automotive Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 240 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |