IKFW50N60ETXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 73A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 91 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/305ns
Switching Energy: 1.5mJ (on), 1.42mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 164 W
| Anzahl | Preis |
|---|---|
| 1+ | 19.03 EUR |
| 30+ | 11.27 EUR |
| 120+ | 9.57 EUR |
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Technische Details IKFW50N60ETXKSA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 73A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 91 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: PG-TO247-3-AI, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 28ns/305ns, Switching Energy: 1.5mJ (on), 1.42mJ (off), Test Condition: 400V, 50A, 7Ohm, 15V, Gate Charge: 290 nC, Part Status: Active, Current - Collector (Ic) (Max): 73 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 164 W.
Weitere Produktangebote IKFW50N60ETXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IKFW50N60ETXKSA1 | Infineon Technologies |
IGBTs INDUSTRY |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IKFW50N60ETXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 120W Case: PG-TO247-3-AI Mounting: THT Gate charge: 290nC Kind of package: tube Pulsed collector current: 150A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 61ns Turn-off time: 332ns Gate-emitter voltage: ±20V Collector current: 59A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IKFW50N60ETXKSA1 |
|
Hersteller: Infineon Technologies
IGBTs INDUSTRY
IGBTs INDUSTRY
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKFW50N60ETXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 61ns
Turn-off time: 332ns
Gate-emitter voltage: ±20V
Collector current: 59A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 61ns
Turn-off time: 332ns
Gate-emitter voltage: ±20V
Collector current: 59A
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH