Technische Details IKFW60N60DH3E Infineon technologies
Category: THT IGBT transistors, Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI, Type of transistor: IGBT, Technology: TRENCHSTOP™, Collector-emitter voltage: 600V, Collector current: 44A, Power dissipation: 104W, Case: PG-TO247-3-AI, Gate-emitter voltage: ±20V, Pulsed collector current: 150A, Mounting: THT, Kind of package: tube, Gate charge: 0.21µC, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 62ns, Turn-off time: 189ns.
Weitere Produktangebote IKFW60N60DH3E
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IKFW60N60DH3EXKSA1 | INFINEON TECHNOLOGIES |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 44A Power dissipation: 104W Case: PG-TO247-3-AI Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Kind of package: tube Gate charge: 0.21µC Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 62ns Turn-off time: 189ns |
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Im Einkaufswagen Stück im Wert von UAH |
| IKFW60N60DH3EXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 44A
Power dissipation: 104W
Case: PG-TO247-3-AI
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Kind of package: tube
Gate charge: 0.21µC
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 189ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 44A
Power dissipation: 104W
Case: PG-TO247-3-AI
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Kind of package: tube
Gate charge: 0.21µC
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 189ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH