Technische Details IKFW60N60DH3E Infineon technologies
Category: THT IGBT transistors, Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI, Type of transistor: IGBT, Technology: TRENCHSTOP™, Power dissipation: 104W, Case: PG-TO247-3-AI, Mounting: THT, Gate charge: 0.21µC, Kind of package: tube, Pulsed collector current: 150A, Turn-on time: 62ns, Turn-off time: 189ns, Gate-emitter voltage: ±20V, Collector current: 44A, Collector-emitter voltage: 600V, Features of semiconductor devices: integrated anti-parallel diode.
Weitere Produktangebote IKFW60N60DH3E
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IKFW60N60DH3EXKSA1 | INFINEON TECHNOLOGIES |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 104W Case: PG-TO247-3-AI Mounting: THT Gate charge: 0.21µC Kind of package: tube Pulsed collector current: 150A Turn-on time: 62ns Turn-off time: 189ns Gate-emitter voltage: ±20V Collector current: 44A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IKFW60N60DH3EXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Pulsed collector current: 150A
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Collector current: 44A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Pulsed collector current: 150A
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Collector current: 44A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH