IKFW75N65EH5XKSA1 INFINEON
Hersteller: INFINEON
Description: INFINEON - IKFW75N65EH5XKSA1 - IGBT, 650V, 80A, 148W, HSIP247, 1.65Vsat
Kollektor-Emitter-Spannung, max.: 650
Verlustleistung: 148
Anzahl der Pins: 3
Bauform - Transistor: HSIP247
Kollektor-Emitter-Sättigungsspannung: 1.65
Kollektorstrom: 80
Betriebstemperatur, max.: 175
Produktpalette: TRENCHSTOP 5
SVHC: No SVHC (08-Jul-2021)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 20.59 EUR |
| 14+ | 17.8 EUR |
| 15+ | 15.21 EUR |
| 50+ | 14.91 EUR |
Produktrezensionen
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Technische Details IKFW75N65EH5XKSA1 INFINEON
Description: IGBT TRENCH FS 650V 80A HSIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 75 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A, Supplier Device Package: PG-HSIP247-3-2, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/206ns, Switching Energy: 1.8mJ (on), 600µJ (off), Test Condition: 400V, 60A, 12Ohm, 15V, Gate Charge: 144 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 148 W.
Weitere Produktangebote IKFW75N65EH5XKSA1 nach Preis ab 9.07 EUR bis 21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IKFW75N65EH5XKSA1 | Infineon Technologies |
IGBTs INDUSTRY |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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IKFW75N65EH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A HSIP247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A Supplier Device Package: PG-HSIP247-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/206ns Switching Energy: 1.8mJ (on), 600µJ (off) Test Condition: 400V, 60A, 12Ohm, 15V Gate Charge: 144 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 148 W |
auf Bestellung 232 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IKFW75N65EH5XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs INDUSTRY
IGBTs INDUSTRY
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.65 EUR |
| 10+ | 12.29 EUR |
| 100+ | 10.26 EUR |
| 480+ | 9.07 EUR |
| IKFW75N65EH5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/206ns
Switching Energy: 1.8mJ (on), 600µJ (off)
Test Condition: 400V, 60A, 12Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/206ns
Switching Energy: 1.8mJ (on), 600µJ (off)
Test Condition: 400V, 60A, 12Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
auf Bestellung 232 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21 EUR |
| 30+ | 12.45 EUR |
| 120+ | 10.57 EUR |