IKP20N60TA

IKP20N60TA Infineon Technologies


INFN-S-A0000110249-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon Technologies
Description: IKP20N60 - AUTOMOTIVE IGBT DISCR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details IKP20N60TA Infineon Technologies

Description: IKP20N60 - AUTOMOTIVE IGBT DISCR, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 41 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: PG-TO220-3-1, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/199ns, Switching Energy: 310µJ (on), 460µJ (off), Test Condition: 400V, 20A, 12Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 156 W.

Weitere Produktangebote IKP20N60TA

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IKP20N60TA IKP20N60TA Hersteller : Infineon Technologies Infineon_IKP20N60T_DS_v02_08_EN-1226893.pdf IGBT Transistors IGBT PRODUCTS
Produkt ist nicht verfügbar