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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.7 EUR |
| 10+ | 2.34 EUR |
| 100+ | 2.11 EUR |
| 500+ | 2.01 EUR |
| 1000+ | 1.85 EUR |
| 2500+ | 1.78 EUR |
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Technische Details IKP20N65F5 Infineon Technologies
Description: IKP20N65 - DISCRETE IGBT WITH AN, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 53 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: PG-TO220-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20ns/165ns, Switching Energy: 160µJ (on), 60µJ (off), Test Condition: 400V, 10A, 32Ohm, 15V, Gate Charge: 48 nC, Part Status: Active, Current - Collector (Ic) (Max): 42 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 125 W.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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IKP20N65F5 | Hersteller : Infineon Technologies |
 Description: IKP20N65 - DISCRETE IGBT WITH ANPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: PG-TO220-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/165ns Switching Energy: 160µJ (on), 60µJ (off) Test Condition: 400V, 10A, 32Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 42 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 125 W |
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