IKP20N65F5XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 42A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/165ns
Switching Energy: 160µJ (on), 60µJ (off)
Test Condition: 400V, 10A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
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Technische Details IKP20N65F5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 42A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 53 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: PG-TO220-3, IGBT Type: Trench, Td (on/off) @ 25°C: 20ns/165ns, Switching Energy: 160µJ (on), 60µJ (off), Test Condition: 400V, 10A, 32Ohm, 15V, Gate Charge: 48 nC, Part Status: Active, Current - Collector (Ic) (Max): 42 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 125 W.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| IKP20N65F5XKSA1 | Infineon Technologies |
IGBTs Y |
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IKP20N65F5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 63W Case: TO220-3 Mounting: THT Kind of package: tube Collector current: 21A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 21ns Gate charge: 48nC Turn-off time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IKP20N65F5XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs Y
IGBTs Y
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKP20N65F5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 21ns
Gate charge: 48nC
Turn-off time: 200ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 21ns
Gate charge: 48nC
Turn-off time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH