| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.12 EUR |
| 10+ | 3.06 EUR |
| 100+ | 2.76 EUR |
| 500+ | 2.56 EUR |
| 1000+ | 2.48 EUR |
| 2500+ | 2.37 EUR |
| 5000+ | 2.14 EUR |
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Technische Details IKP20N65H5 Infineon Technologies
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 20A, Power dissipation: 125W, Case: TO220-3, Gate-emitter voltage: ±20V, Pulsed collector current: 60A, Mounting: THT, Gate charge: 48nC, Kind of package: tube, Manufacturer series: H5, Features of semiconductor devices: integrated anti-parallel diode.
Weitere Produktangebote IKP20N65H5 nach Preis ab 7.09 EUR bis 7.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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IKP20N65H5XKSA1 | INFINEON TECHNOLOGIES |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 125W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 48nC Kind of package: tube Manufacturer series: H5 Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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| IKP20N65H5 | Infineon technologies |
auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IKP20N65H5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.09 EUR |
| IKP20N65H5 |
Hersteller: Infineon technologies
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)