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IKP20N65H5XKSA1 INFINEON TECHNOLOGIES


IKP20N65H5-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
22+3.3 EUR
35+2.04 EUR
Mindestbestellmenge: 22 Stücke
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Technische Details IKP20N65H5XKSA1 INFINEON TECHNOLOGIES

Description: IGBT TRENCH 650V 42A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 52 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: PG-TO220-3, IGBT Type: Trench, Td (on/off) @ 25°C: 18ns/156ns, Switching Energy: 170µJ (on), 60µJ (off), Test Condition: 400V, 10A, 32Ohm, 15V, Gate Charge: 48 nC, Part Status: Active, Current - Collector (Ic) (Max): 42 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 125 W.

Weitere Produktangebote IKP20N65H5XKSA1 nach Preis ab 2.7 EUR bis 5.97 EUR

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IKP20N65H5XKSA1 IKP20N65H5XKSA1 Infineon Technologies Infineon-IKP20N65H5-DS-v02_01-en.pdf?fileId=5546d461464245d30146a500cc446cf4 Description: IGBT TRENCH 650V 42A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/156ns
Switching Energy: 170µJ (on), 60µJ (off)
Test Condition: 400V, 10A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
auf Bestellung 391 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.97 EUR
50+2.99 EUR
100+2.7 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N65H5XKSA1 Infineon-IKP20N65H5-DS-v02_01-en.pdf?fileId=5546d461464245d30146a500cc446cf4
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 42A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/156ns
Switching Energy: 170µJ (on), 60µJ (off)
Test Condition: 400V, 10A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
auf Bestellung 391 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+5.97 EUR
50+2.99 EUR
100+2.7 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH