Technische Details IKP20N65H5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 42A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 52 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: PG-TO220-3, IGBT Type: Trench, Td (on/off) @ 25°C: 18ns/156ns, Switching Energy: 170µJ (on), 60µJ (off), Test Condition: 400V, 10A, 32Ohm, 15V, Gate Charge: 48 nC, Part Status: Active, Current - Collector (Ic) (Max): 42 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 125 W.
Weitere Produktangebote IKP20N65H5XKSA1 nach Preis ab 2.8 EUR bis 7.29 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IKP20N65H5XKSA1 | Infineon Technologies |
 Trans IGBT Chip N-CH 650V 42A 125W 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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IKP20N65H5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 42A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 52 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: PG-TO220-3 IGBT Type: Trench Td (on/off) @ 25°C: 18ns/156ns Switching Energy: 170µJ (on), 60µJ (off) Test Condition: 400V, 10A, 32Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 42 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 125 W |
auf Bestellung 365 Stücke: Lieferzeit 10-14 Tag (e) |
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IKP20N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 125W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 48nC Kind of package: tube Manufacturer series: H5 Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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IKP20N65H5XKSA1 | INFINEON |
Description: INFINEON - IKP20N65H5XKSA1 - IGBT, 42 A, 1.65 V, 125 W, 650 V, TO-220, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: - Verlustleistung: 125W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-220 Dauerkollektorstrom: 42A Anzahl der Pins: 3Pin(s) Produktpalette: TRENCHSTOP 5 Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code usEccn: EAR99 Betriebstemperatur, max.: 175°C |
auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) |
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IKP20N65H5XKSA1 | Infineon Technologies |
Trans IGBT Chip N-CH 650V 42A 125W 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IKP20N65H5XKSA1 | Infineon Technologies |
Trans IGBT Chip N-CH 650V 42A 125W 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IKP20N65H5XKSA1 |
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Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 650V 42A 125W 3-Pin(3+Tab) TO-220 Tube
Trans IGBT Chip N-CH 650V 42A 125W 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 5.25 EUR |
| IKP20N65H5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 42A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/156ns
Switching Energy: 170µJ (on), 60µJ (off)
Test Condition: 400V, 10A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
Description: IGBT TRENCH 650V 42A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/156ns
Switching Energy: 170µJ (on), 60µJ (off)
Test Condition: 400V, 10A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
auf Bestellung 365 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.2 EUR |
| 50+ | 3.11 EUR |
| 100+ | 2.8 EUR |
| IKP20N65H5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.09 EUR |
| IKP20N65H5XKSA1 |
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Hersteller: INFINEON
Description: INFINEON - IKP20N65H5XKSA1 - IGBT, 42 A, 1.65 V, 125 W, 650 V, TO-220, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.65V
MSL: -
Verlustleistung: 125W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220
Dauerkollektorstrom: 42A
Anzahl der Pins: 3Pin(s)
Produktpalette: TRENCHSTOP 5
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
Description: INFINEON - IKP20N65H5XKSA1 - IGBT, 42 A, 1.65 V, 125 W, 650 V, TO-220, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.65V
MSL: -
Verlustleistung: 125W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220
Dauerkollektorstrom: 42A
Anzahl der Pins: 3Pin(s)
Produktpalette: TRENCHSTOP 5
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 7.29 EUR |
| 69+ | 3.39 EUR |
| 100+ | 2.83 EUR |
| IKP20N65H5XKSA1 |
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Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 650V 42A 125W 3-Pin(3+Tab) TO-220 Tube
Trans IGBT Chip N-CH 650V 42A 125W 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| IKP20N65H5XKSA1 |
|
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 650V 42A 125W 3-Pin(3+Tab) TO-220 Tube
Trans IGBT Chip N-CH 650V 42A 125W 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)