IKP30N65F5XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT TRENCH 650V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/170ns
Switching Energy: 280µJ (on), 70µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
auf Bestellung 481 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.08 EUR |
| 50+ | 3.62 EUR |
| 100+ | 3.28 EUR |
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Technische Details IKP30N65F5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 55A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 55 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: PG-TO220-3, IGBT Type: Trench, Td (on/off) @ 25°C: 19ns/170ns, Switching Energy: 280µJ (on), 70µJ (off), Test Condition: 400V, 15A, 23Ohm, 15V, Gate Charge: 65 nC, Part Status: Active, Current - Collector (Ic) (Max): 55 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 188 W.
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Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 35A; 93W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 93W Case: TO220-3 Mounting: THT Gate charge: 70nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Turn-on time: 22ns Turn-off time: 189ns Pulsed collector current: 90A Collector current: 35A Anzahl je Verpackung: 1 Stücke |
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IKP30N65F5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 35A; 93W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 93W Case: TO220-3 Mounting: THT Gate charge: 70nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Turn-on time: 22ns Turn-off time: 189ns Pulsed collector current: 90A Collector current: 35A |
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