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IKQ120N60TAXKSA1

IKQ120N60TAXKSA1 Infineon Technologies


infn_s_a0000250409_1-2271239.pdf Hersteller: Infineon Technologies
IGBT Transistors IGBT PRODUCTS
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Technische Details IKQ120N60TAXKSA1 Infineon Technologies

Description: IGBT TRENCH/FS 600V 160A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 280 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A, Supplier Device Package: PG-TO247-3-46, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 33ns/310ns, Switching Energy: 4.1mJ (on), 2.8mJ (off), Test Condition: 400V, 120A, 3Ohm, 15V, Gate Charge: 772 nC, Grade: Automotive, Part Status: Obsolete, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 480 A, Power - Max: 833 W, Qualification: AEC-Q101.

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IKQ120N60TAXKSA1 IKQ120N60TAXKSA1 Hersteller : Infineon Technologies dgdlfileid5546d46249cd10140149d21543934de3.pdf Trans IGBT Chip N-CH 600V 160A 833000mW Automotive 3-Pin(3+Tab) TO-247 Tube
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IKQ120N60TAXKSA1 IKQ120N60TAXKSA1 Hersteller : INFINEON TECHNOLOGIES IKQ120N60TA.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IKQ120N60TAXKSA1 IKQ120N60TAXKSA1 Hersteller : Infineon Technologies IKQ120N60TA.pdf Description: IGBT TRENCH/FS 600V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 280 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/310ns
Switching Energy: 4.1mJ (on), 2.8mJ (off)
Test Condition: 400V, 120A, 3Ohm, 15V
Gate Charge: 772 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 833 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IKQ120N60TAXKSA1 IKQ120N60TAXKSA1 Hersteller : INFINEON TECHNOLOGIES IKQ120N60TA.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar