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Technische Details IKQ40N120CH3 Infineon Technologies
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3, Type of transistor: IGBT, Power dissipation: 136W, Case: TO247-3, Mounting: THT, Kind of package: tube, Pulsed collector current: 40A, Turn-on time: 76ns, Turn-off time: 331ns, Gate-emitter voltage: ±20V, Collector current: 40A, Manufacturer series: H3, Collector-emitter voltage: 1.2kV, Features of semiconductor devices: integrated anti-parallel diode.
Weitere Produktangebote IKQ40N120CH3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IKQ40N120CH3XKSA1 | INFINEON TECHNOLOGIES |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3 Type of transistor: IGBT Power dissipation: 136W Case: TO247-3 Mounting: THT Kind of package: tube Pulsed collector current: 40A Turn-on time: 76ns Turn-off time: 331ns Gate-emitter voltage: ±20V Collector current: 40A Manufacturer series: H3 Collector-emitter voltage: 1.2kV Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IKQ40N120CH3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 40A
Turn-on time: 76ns
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 40A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 40A
Turn-on time: 76ns
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 40A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH