IKQ40N120CH3 Infineon Technologies



Hersteller: Infineon Technologies
Infineon INDUSTRY 14
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Technische Details IKQ40N120CH3 Infineon Technologies

Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3, Type of transistor: IGBT, Power dissipation: 136W, Case: TO247-3, Mounting: THT, Kind of package: tube, Turn-on time: 76ns, Turn-off time: 331ns, Gate-emitter voltage: ±20V, Collector current: 40A, Pulsed collector current: 40A, Features of semiconductor devices: integrated anti-parallel diode, Collector-emitter voltage: 1.2kV, Manufacturer series: H3.

Weitere Produktangebote IKQ40N120CH3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IKQ40N120CH3XKSA1 IKQ40N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ40N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKQ40N120CH3XKSA1 IKQ40N120CH3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH