IKQ50N120CH3 Infineon Technologies

Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3, Type of transistor: IGBT, Power dissipation: 173W, Case: TO247-3, Mounting: THT, Gate charge: 235nC, Kind of package: tube, Gate-emitter voltage: ±20V, Collector current: 50A, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 200A, Manufacturer series: H3, Collector-emitter voltage: 1.2kV.