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IKQ50N120CT2 Infineon Technologies


Hersteller: Infineon Technologies
Infineon INDUSTRY 14
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Technische Details IKQ50N120CT2 Infineon Technologies

Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3, Type of transistor: IGBT, Technology: TRENCHSTOP™ 2, Power dissipation: 151W, Case: TO247-3, Mounting: THT, Gate charge: 235nC, Kind of package: tube, Gate-emitter voltage: ±20V, Collector current: 50A, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 200A, Collector-emitter voltage: 1.2kV.

Weitere Produktangebote IKQ50N120CT2

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IKQ50N120CT2XKSA1 IKQ50N120CT2XKSA1 INFINEON TECHNOLOGIES IKQ50N120CT2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 151W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKQ50N120CT2XKSA1 IKQ50N120CT2.pdf
IKQ50N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 151W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH