IKQ50N120CT2XKSA1 Infineon Technologies
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 17.23 EUR |
| 10+ | 16.12 EUR |
| 25+ | 14.54 EUR |
| 100+ | 13.41 EUR |
| 240+ | 13.39 EUR |
| 480+ | 11.35 EUR |
| 2640+ | 11.33 EUR |
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Technische Details IKQ50N120CT2XKSA1 Infineon Technologies
Description: IGBT TRENCH FS 1200V 100A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, Supplier Device Package: PG-TO247-3-46, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 34ns/312ns, Switching Energy: 3.8mJ (on), 3.3mJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 235 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 652 W.
Weitere Produktangebote IKQ50N120CT2XKSA1 nach Preis ab 13.76 EUR bis 18.06 EUR
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IKQ50N120CT2XKSA1 | Hersteller : Infineon Technologies |
 Description: IGBT TRENCH FS 1200V 100A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Supplier Device Package: PG-TO247-3-46 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/312ns Switching Energy: 3.8mJ (on), 3.3mJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 235 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 652 W |
auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
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IKQ50N120CT2XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 100A 652000mW 3-Pin(3+Tab) TO-247 Tube |
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IKQ50N120CT2XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Type of transistor: IGBT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 235nC Technology: TRENCHSTOP™ 2 Power dissipation: 151W Mounting: THT Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
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IKQ50N120CT2XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Type of transistor: IGBT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 235nC Technology: TRENCHSTOP™ 2 Power dissipation: 151W Mounting: THT Case: TO247-3 |
Produkt ist nicht verfügbar |