IKQ75N120CH3 Infineon Technologies

Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3, Type of transistor: IGBT, Collector-emitter voltage: 1.2kV, Collector current: 75A, Power dissipation: 256W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Mounting: THT, Gate charge: 0.37µC, Kind of package: tube, Manufacturer series: H3, Features of semiconductor devices: integrated anti-parallel diode.