IKQ75N120CH3 Infineon Technologies


Infineon_IKQ75N120CH3_DataSheet_v02_03_EN-3361840.pdf
Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IKQ75N120CH3 Infineon Technologies

Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3, Mounting: THT, Manufacturer series: H3, Pulsed collector current: 300A, Type of transistor: IGBT, Kind of package: tube, Case: TO247-3, Gate-emitter voltage: ±20V, Collector current: 75A, Collector-emitter voltage: 1.2kV, Power dissipation: 256W, Gate charge: 0.37µC, Features of semiconductor devices: integrated anti-parallel diode.

Weitere Produktangebote IKQ75N120CH3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IKQ75N120CH3XKSA1 IKQ75N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ75N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Pulsed collector current: 300A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.2kV
Power dissipation: 256W
Gate charge: 0.37µC
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKQ75N120CH3XKSA1 IKQ75N120CH3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Pulsed collector current: 300A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.2kV
Power dissipation: 256W
Gate charge: 0.37µC
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH