IKW20N60H3FKSA1 Infineon Technologies
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 43+ | 3.7 EUR |
| 49+ | 3.08 EUR |
| 52+ | 2.8 EUR |
| 100+ | 2.36 EUR |
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Technische Details IKW20N60H3FKSA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 112 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A, Supplier Device Package: PG-TO247-3-1, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 17ns/194ns, Switching Energy: 800µJ, Test Condition: 400V, 20A, 14.6Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 170 W.
Weitere Produktangebote IKW20N60H3FKSA1 nach Preis ab 2.38 EUR bis 17.88 EUR
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IKW20N60H3FKSA1 | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 40A 170W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 225 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW20N60H3FKSA1 | Hersteller : Infineon Technologies |
IGBT Transistors 600V 20A 170W |
auf Bestellung 1980 Stücke: Lieferzeit 147-161 Tag (e) |
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IKW20N60H3FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 85W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 28ns Turn-off time: 205ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW20N60H3FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 85W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 28ns Turn-off time: 205ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW20N60H3FKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 40A 170000mW 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 227 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW20N60H3FKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 40A 170W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IKW20N60H3FKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 40A 170W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IKW20N60H3FKSA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 600V 40A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 112 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/194ns Switching Energy: 800µJ Test Condition: 400V, 20A, 14.6Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 170 W |
Produkt ist nicht verfügbar |