IKW25N120H3FKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 9.72 EUR |
10+ | 7.45 EUR |
11+ | 7.05 EUR |
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Technische Details IKW25N120H3FKSA1 INFINEON TECHNOLOGIES
Description: IGBT TRENCH FS 1200V 50A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 290 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A, Supplier Device Package: PG-TO247-3-1, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/277ns, Switching Energy: 2.65mJ, Test Condition: 600V, 25A, 23Ohm, 15V, Gate Charge: 115 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 326 W.
Weitere Produktangebote IKW25N120H3FKSA1 nach Preis ab 6.39 EUR bis 14.77 EUR
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IKW25N120H3FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 326W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 115nC Kind of package: tube Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW25N120H3FKSA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 1200V 50A 326W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 203 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW25N120H3FKSA1 | Hersteller : Infineon Technologies | IGBT Transistors IGBT PRODUCTS |
auf Bestellung 480 Stücke: Lieferzeit 168-182 Tag (e) |
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IKW25N120H3FKSA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 1200V 50A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 290 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/277ns Switching Energy: 2.65mJ Test Condition: 600V, 25A, 23Ohm, 15V Gate Charge: 115 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 326 W |
auf Bestellung 399 Stücke: Lieferzeit 21-28 Tag (e) |
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IKW25N120H3FKSA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 1200V 50A 326000mW 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 1597 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW25N120H3FKSA1 | Hersteller : INFINEON |
Description: INFINEON - IKW25N120H3FKSA1 - IGBT, 25 A, 2.4 V, 326 W, 1.2 kV, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.4V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 326W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 25A SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1210 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW25N120H3FKSA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 1200V 50A 326W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW25N120H3FKSA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 1200V 50A 326W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW25N120H3FKSA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 1200V 50A 326W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IKW25N120H3FKSA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 1200V 50A 326W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |